PART |
Description |
Maker |
IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
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Advanced Power Technology, Ltd.
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STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
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STMicroelectronics ST Microelectronics
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STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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STB60N03L-10 4892 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
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AP25P15GS-HF AP25P15GS-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp.
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APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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Advanced Power Technology Ltd.
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STP40NE03L-20 5372 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE POWER MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated 7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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Infineon Technologies AG
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SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET (SD217 / SD219) N CHANNEL ENHANCEMENT MODE D MOS POWER FET
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List of Unclassifed Man... Topaz Semiconductor ETC[ETC]
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SD1106DD SD1106 SD1106AD SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET N CHANNEL ENHANCEMENT MODE D MOS POWER FETS
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Topaz Semiconductor ETC[ETC]
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